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Table 1 Instrumental parameters of ICP-OES for Si determination

From: Facile and precise quantitative determination of silicon in naphtha by inductively coupled plasma-optical emission spectroscopy

Exposure time (s)

RF power (w)

Nebulizer flow (L/min)

Additional gas flow (mL/min)

Coolant gas flow (L/min)

Auxiliary gas flow (L/min)

10

1350

0.50

50

12

0.5