 Technical note
 Open Access
 Published:
Advanced method for the accurate measurement of tilt angle in a transmission electron microscopy goniometer
Journal of Analytical Science and Technology volumeÂ 9, ArticleÂ number:Â 6 (2018)
Abstract
Background
In order to improve the reliability of the electron tomography (ET) technique, which reveals threedimensional information of nanostructured materials from a series of tilted twodimensional images, it is essential that the mechanical tilt angle be accurately measured by the transmission electron microscopy (TEM) goniometer.
Findings
In this study, a calibration specimen was fabricated by nanohole patterning using a focused ion beam in order to determine mechanical tilt angles. The TEM goniometer tiltangle accuracies were directly confirmed by measuring the changing areas of the projected nanosized hole. New calibration equations were developed and applied for the accurate determination of tilt angle.
Conclusion
We expect that the calibration specimen will effectively determine and correct the mechanical tilt angles in TEM goniometers leading to improvements in the ET technique.
Introduction
Transmission electron microscopy (TEM) is an essential tool for the quantitative structural analysis of nanostructured materials, due to its ability to directly visualize individual nanosized objects. In particular, structural information such as specimen shape, size, and distribution can be analyzed from the directly obtained images (MÃ¼hlfeld et al. 2007). However, projected twodimensional (2D) images acquired from threedimensional (3D) nanostructured materials can provide limited information, and sometimes, information is missing; the development of nanotechnology requires the relationship between the 3D structure and properties of the material to be characterized on the nanometer scale (Ercius et al. 2015). In order to overcome the lack of information provided by 2D images, the electron tomography (ED) technique has been employed to produce reconstructed 3D images. In this technique, multiple 2D images (normally 50â€“150 images), acquired by tilting the nanosized object in 1Â° or 2Â° intervals over a wide range of angles, are required in order to reconstruct a highquality 3D image. The exact alignment of a series of tilted 2D images prior to the construction of the 3D image in a manner that avoids image distortion is also important for improving 3D information. Furthermore, an accurate TEM goniometer is required for the acquisition of the tilted 2D images in order to prevent image misalignment (Hayashida et al. 2014). However, errors between the actual and TEM goniometerdisplayed tilt angles may occur due to mechanical imperfections. For this reason, it is necessary to accurately measure and correct the tilt angles measured by the TEM goniometer (Hayashida et al. 2011). Although monocrystalline diffraction patterns or Kikuchi diffraction patterns have been used to measure mechanical tilt angles in a previous report (Shaw and Hills 1981), the method is not applicable to all types of TEM specimens and currently manufactured transmission electron microscopes. Therefore, an advanced method for the measurement of the actual tilt angle by a TEM goniometer is required. In this study, we report the development of a new method for the direct and accurate determination of tilt angles by a TEM goniometer.
Experimental
Fabrication of nanohole patterns
A nanohole with a diameter of 500Â nm was fabricated on a SiN membrane TEM window grid (SN100A50Q10, SiMPore Inc.) using a focused ion beam (FIB) (Quanta 3D FEG, FEI) at an accelerating voltage of 30Â kV, ion current of 10Â pA, and dwell time of 15Â Î¼s. Prior to nanohole patterning, the SiN membrane was coated with a severalnmthick Au layer using a sputter coater (SCD 055, BALTEC) to reduce the effect of charging caused by the insulating SiN film.
Nanohole pattern imaging
The nanosized hole was analyzed by Cscorrected TEM (Libra 200 HT Mc, Carl Zeiss). A series of tilted 2D images of the nanosized hole was obtained over the âˆ’â€‰50Â° to +â€‰50Â° range in 2Â° increments. In each 2D image, the projected area of the nanosized hole was measured using the particle analysis tool available in the DigitalMicrograph (DM) software package (Gatan Inc.).
Results and discussion
Establishment of the calibration equation
Tilt angle can simply be determined from the projected area of the hole using the following equation:
where Î¸ is the tilt angle, A_{ T } is the projected area of the nanohole tilted at angle Î¸, and A_{ I } is the initial area of the nanohole. However, this equation is only applicable when the nanohole is very thin. Indeed, the nanohole pattern that we used was 50Â nm thick (the thickness of the SiN membrane). Therefore, we modified the formula to take into account the thickness of the nanohole through simple geometrical calculations. A schematic diagram of the developed protocol is presented in Fig.Â 1. When the incident beam is perpendicular to plane A, the tilt angle between the nanohole and plane A is Î¸. The area of the nanohole projected by the transmitted beam (A_{ T }) is equal to the overlap area between the red and blue circles multiplied by cos Î¸, as shown in Fig.Â 1b, where the overlap area, A_{ O }, is defined as
and A_{ T } and Î¸ are derived as shown below:
In Eq.Â (2), A_{ C } is the area of the yellow sector, A_{ I T } and Î± are the area and vertex angle of the green isosceles triangle, respectively, and r is the radius of the hole. Angle Î± is obtained by introducing the additional variables displayed in Fig.Â 1a as follows:
where t is the thickness of the nanohole.
If the nanohole is very thin (râ€‰>â€‰>â€‰t), then Eq.Â (4) collapses to Eq.Â (1) as expected. From Eqs. (4) and (5), we see that Î¸ is a function of A_{ O }, t, and r. Since t and r are known variables determined from the features of the nanohole, we only need to consider the projected area of the tilted nanohole in order to calculate the tilt angle.
To verify the reliability of this equation, tilt angles were calculated using a simulated 3D model with an aspect ratio of 0.1 between diameter and thickness. FigureÂ 2a shows the representative 3D model images obtained at different tilt angles in which the models were tilted in 2Â° increments over the âˆ’â€‰50Â° to +â€‰50Â° range. The projected area of the nanohole was measured by counting the number pixels above the threshold intensity of the brightest region using the DM software, as shown in Fig.Â 2b, c. Finally, the numerical tiltangle solution was determined from the acquired projected area by computer calculation. FigureÂ 2d displays the calculated tilt angle as a function of actual tilt angle. All calculated angles corresponded to the actual angle to within an error (2Ïƒ) of 0.6%; the R^{2} value of the linear fit was unity, which means that a welldefined nanohole device will lead to the correct goniometer tilt angle from the projected area fraction without the need for any external device for measuring tilt angle.
Fabrication of the nanohole pattern
To fabricate a welldefined nanohole, we used the FIB patterning technique. FigureÂ 3a shows an SEM image that displays the morphology of the entire SiN membrane of the TEM window grid. The dark line in the blue square is an array of 200nmdiameter holes (inset, Fig.Â 3a) that was formed by hair masking the Au coating to form guidelines for the location of the nanohole pattern in the center of the window (red square). For tiltangle measurements, we fabricated a 500nmdiameter nanohole in a 50nmthick SiN membrane, as shown in Fig.Â 3b.
Analysis of the fabricated nanosized hole by TEM
During the TEM analysis of the nanohole, both brightfield TEM (BFTEM) images in conventional TEM mode were acquired, as shown in Fig.Â 4a, b, as well as highangle annular dark field images in scanning TEM mode (HAADFSTEM), as shown in Fig.Â 4d, e, in order to compare the measurement accuracies. FigureÂ 4c, f displays the BFTEM and HAADFSTEM image histograms, respectively, which reveal that the HAADFSTEM images display more distinct edge contrast between the nanohole and the amorphous thin film and, consequently, the hole area was more accurately selected for measurement. Based on the analyzed results, the measurement error is significantly reduced in HAADFSTEM mode.
The fabricated nanosized hole was applied in a practical setting for the actual measurement of tilt angles by the TEM goniometer. The 500nm nanosized hole was used to acquire a series of tilted 2D images. The projected area of the nanosized hole was determined in each 2D image, and the changes in tilt angle were calculated by computer using the equations discussed in the previous section. FigureÂ 5 displays the calculated angle as a function of the nominal angle displayed by the goniometer. The average differences between the two angles in the 0 to +â€‰50Â° and 0 to âˆ’â€‰50Â° ranges were 1.09Â° and 2.18Â°, respectively. The errors determined by computer calculation appear to be quite high when compared to the value of Â±â€‰0.02Â° provided by the TEM manufacturer. However, since we formulated Eq. (4) assuming an ideal nanohole geometry, this observed difference is possibly due to the gentle slope of the nanohole wall.
Conclusions
A 500nmdiameter nanosized hole was fabricated in a SiN membrane TEM window grid by FIB patterning. The ion beam milling conditions were optimized in order to produce the desired shape and size of the nanosized hole. In this technical note, we address a newly developed method for the measurement of the tilt angle in a TEM goniometer using a fabricated nanohole, and a simple equation that considers the nanohole geometry is introduced to accurately calculate tilt angles in a TEM goniometer. By applying this advanced method, the artificial nanohole can be as a calibration specimen to correct the mechanical tilt angles provided by a TEM goniometer. We expect that this method will increase the reliability of the ET technique for the structural analysis of nanosized objects without the need for expensive devices, although further development of the FIB technique is needed in order to improve sharpedge control, to reduce the influence of film thickness, and to improve angularmeasurement accuracies.
Abbreviations
 BF:

Bright field
 ET:

Electron tomography
 FIB:

Focused ion beam
 HAAFD:

Highangle annular dark field
 STEM:

Scanning transmission electron microscopy
 TEM:

Transmission electron microscopy
References
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Acknowledgements
This work was supported by a Korea Basic Science Institute grant (D38612).
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Contributions
JGK designed and coordinated the study. JHL and SGL carried out the experiments and image processing. HS and SJY refined the data and drafted the manuscript. All authors have read and approved the final manuscript.
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Lee, JH., Suh, H., Lee, SG. et al. Advanced method for the accurate measurement of tilt angle in a transmission electron microscopy goniometer. J Anal Sci Technol 9, 6 (2018). https://doi.org/10.1186/s4054301801406
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DOI: https://doi.org/10.1186/s4054301801406
Keywords
 Electron tomography
 Calibration specimen
 Goniometer
 Nanohole patterning
 Focused ion beam